Fabrication and structural analysis of Al, Ga, and In nanocluster crystals
Identifieur interne : 00DD75 ( Main/Repository ); précédent : 00DD74; suivant : 00DD76Fabrication and structural analysis of Al, Ga, and In nanocluster crystals
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Abstract
Artificial nanocluster crystals of In, Ga, and Al were fabricated using a technique in which surface mediated magic clustering is used to achieve identical cluster size while the Si(111)-7×7 surface is used as a template for ordering the clusters. The atomic structures, formation mechanism and stability of the nanoclusters were studied with in situ scanning tunneling microscopy combined with first-principles total energy calculations. Our study shows that delicate control of growth kinetics is extremely important for cluster crystal fabrication, and there is essentially no limitation to this method. The high thermal stability and unique structure make these artificial nanocluster crystals promising for various applications.
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S. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Xue, Qi Kun" uniqKey="Xue Q">Qi-Kun Xue</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Li, Zhi Qiang" uniqKey="Li Z">Zhi-Qiang Li</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario, K1A 0R6, Canada</s1><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Canada</country><wicri:regionArea>Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario, K1A 0R6</wicri:regionArea><wicri:noRegion>K1A 0R6</wicri:noRegion></affiliation></author><author><name sortKey="Zhang, Zhenyu" uniqKey="Zhang Z">Zhenyu Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032</s1><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Oak Ridge National Laboratory, Oak Ridge</wicri:cityArea></affiliation></author><author><name sortKey="Zhang, S B" uniqKey="Zhang S">S. B. Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0563086</idno><date when="2002-10-15">2002-10-15</date><idno type="stanalyst">PASCAL 02-0563086 AIP</idno><idno type="RBID">Pascal:02-0563086</idno><idno type="wicri:Area/Main/Corpus">00E383</idno><idno type="wicri:Area/Main/Repository">00DD75</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium</term><term>Chemical bonds</term><term>Experimental study</term><term>Gallium</term><term>Indium</term><term>Materials preparation</term><term>Metal clusters</term><term>Nanostructured materials</term><term>STM</term><term>Thermal stability</term><term>Total energy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8107</term><term>6837E</term><term>6843B</term><term>6146</term><term>Etude expérimentale</term><term>Indium</term><term>Gallium</term><term>Aluminium</term><term>Agrégat métallique</term><term>Nanomatériau</term><term>Préparation matériau</term><term>STM</term><term>Energie totale</term><term>Stabilité thermique</term><term>Liaison chimique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Aluminium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Artificial nanocluster crystals of In, Ga, and Al were fabricated using a technique in which surface mediated magic clustering is used to achieve identical cluster size while the Si(111)-7×7 surface is used as a template for ordering the clusters. The atomic structures, formation mechanism and stability of the nanoclusters were studied with in situ scanning tunneling microscopy combined with first-principles total energy calculations. Our study shows that delicate control of growth kinetics is extremely important for cluster crystal fabrication, and there is essentially no limitation to this method. The high thermal stability and unique structure make these artificial nanocluster crystals promising for various applications.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>66</s2></fA05><fA06><s2>16</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Fabrication and structural analysis of Al, Ga, and In nanocluster crystals</s1></fA08><fA11 i1="01" i2="1"><s1>JIA (Jin-Feng)</s1></fA11><fA11 i1="02" i2="1"><s1>LIU (Xi)</s1></fA11><fA11 i1="03" i2="1"><s1>WANG (Jun-Zhong)</s1></fA11><fA11 i1="04" i2="1"><s1>LI (Jian-Long)</s1></fA11><fA11 i1="05" i2="1"><s1>WANG (X. S.)</s1></fA11><fA11 i1="06" i2="1"><s1>XUE (Qi-Kun)</s1></fA11><fA11 i1="07" i2="1"><s1>LI (Zhi-Qiang)</s1></fA11><fA11 i1="08" i2="1"><s1>ZHANG (Zhenyu)</s1></fA11><fA11 i1="09" i2="1"><s1>ZHANG (S. 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